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Fall Time: 174 ns, 89 ns
Rise Time: 3.1 ns, 15 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Qg - Gate Charge: 600 pC, 700 pC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 380 mW
Vgs - Gate-Source Voltage: - 6 V, + 6 V
Typical Turn-On Delay Time: 4.9 ns, 16 ns
Typical Turn-Off Delay Time: 386 ns, 213 ns
Id - Continuous Drain Current: 750 mA, 600 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 450 mOhms, 750 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 500 mV
