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Fall Time: 6.4 ns, 16.4 ns
Rise Time: 3.3 ns, 5.7 ns
Technology: Si
Unit Weight: 270 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 500 pC, 400 pC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 350 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 4 ns, 5.8 ns
Typical Turn-Off Delay Time: 19 ns, 31.1 ns
Id - Continuous Drain Current: 450 mA, 310 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 990 mOhms, 1.9 Ohms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 400 mV
