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Fall Time: 5.8 ns, 12.4 ns
Rise Time: 4.2 ns, 4.9 ns
Technology: Si
Unit Weight: 750 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 9.8 nC, 10.5 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.2 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 3.9 ns, 6.8 ns
Typical Turn-Off Delay Time: 16.6 ns, 28.4 ns
Id - Continuous Drain Current: 6.5 A, 4.2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 15 mOhms, 38 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1 V, 2 V
