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Fall Time: 5.3 ns, 40.4 ns
Rise Time: 4.4 ns, 17.1 ns
Technology: Si
Unit Weight: 750 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 13.2 nC, 22 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.2 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 3.3 ns, 9.7 ns
Typical Turn-Off Delay Time: 22.3 ns, 60.5 ns
Id - Continuous Drain Current: 5.5 A, 5.8 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 12 S, 18.6 S
Rds On - Drain-Source Resistance: 19 mOhms, 21 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1 V, 3 V
