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Fall Time: 7.5 ns, 8.7 ns
Rise Time: 2.2 ns, 5.2 ns
Technology: Si
Unit Weight: 270 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 380 pC, 350 pC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 350 mW
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 3.2 ns, 3.5 ns
Typical Turn-Off Delay Time: 21 ns, 18.8 ns
Id - Continuous Drain Current: 220 mA, 200 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 2.3 Ohms, 5.1 Ohms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1 V
