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Fall Time: 4.8 ns, 25.5 ns
Rise Time: 7.1 ns, 19.6 ns
Technology: Si
Unit Weight: 750 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Qg - Gate Charge: 8.8 nC, 21.5 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.3 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 5.3 ns, 8.7 ns
Typical Turn-Off Delay Time: 15.1 ns, 34.9 ns
Id - Continuous Drain Current: 5.1 A, 7 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 24 mOhms, 45 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 3 V
