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Fall Time: 4.3 nS, 26.1 nS
Rise Time: 1.8 ns, 6.3 ns
Technology: Si
Unit Weight: 750 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 20.8 nC, 9.5 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.56 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 3.6 nS, 3.7 nS
Typical Turn-Off Delay Time: 20.1 nS, 58.7 nS
Id - Continuous Drain Current: 5.1 A, 3.1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 55 mOhms, 130 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 3 V
