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Fall Time: 22 ns, 41 ns
Rise Time: 3.6 ns, 20 ns
Technology: Si
Unit Weight: 65 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 400 fC, 7.3 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 580 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V, - 12 V, + 12 V
Typical Turn-On Delay Time: 3.7 ns, 12 ns
Typical Turn-Off Delay Time: 102 ns, 38 ns
Id - Continuous Drain Current: 390 mA, 2.9 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 4 Ohms, 72 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V, 20 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V, 1.25 V
