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Fall Time: 12.3 ns, 20.7 ns
Rise Time: 7.4 ns, 8.1 ns
Technology: Si
Unit Weight: 6 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 736.6 pC, 622.4 pC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 530 mW
Vgs - Gate-Source Voltage: - 6 V, + 6 V
Typical Turn-On Delay Time: 5.1 ns, 5.1 ns
Typical Turn-Off Delay Time: 26.7 ns, 28.4 ns
Id - Continuous Drain Current: 870 mA, 640 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 400 mOhms, 700 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 500 mV
