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Fall Time: 22.45 ns, 22.45 ns
Rise Time: 13.43 ns, 13.43 ns
Technology: Si
Unit Weight: 30 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 31.3 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 980 mW
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 3.69 ns, 3.69 ns
Typical Turn-Off Delay Time: 32.18 ns, 32.18 ns
Id - Continuous Drain Current: 6.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 11 mOhms
Vds - Drain-Source Breakdown Voltage: 24 V
Vgs th - Gate-Source Threshold Voltage: 600 mV
