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Fall Time: 15.6 ns, 2.2 ns
Rise Time: 7.4 ns, 4.6 ns
Technology: Si
Unit Weight: 8 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 12.3 nC, 13.8 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.3 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 1.6 ns, 1.7 ns
Typical Turn-Off Delay Time: 31.2 ns, 18.3 ns
Id - Continuous Drain Current: 3.8 A, 2.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 55 mOhms, 110 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 500 mV, 400 mV
