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Fall Time: 3 ns, 13 ns
Rise Time: 5 ns, 7.3 ns
Technology: Si
Unit Weight: 8 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Qg - Gate Charge: 13 nC, 9 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.12 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 3 ns, 4.8 ns
Typical Turn-Off Delay Time: 13 ns, 20 ns
Id - Continuous Drain Current: 3.4 A, 2.8 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 4 S, 6 S
Rds On - Drain-Source Resistance: 60 mOhms, 95 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 500 mV, 1.8 V
