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Fall Time: 10.1 ns, 10.1 ns
Rise Time: 21.1 ns, 21.1 ns
Technology: Si
Unit Weight: 191 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 9.6 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 870 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 7.8 ns, 7.8 ns
Typical Turn-Off Delay Time: 38.6 ns, 38.6 ns
Id - Continuous Drain Current: 4.9 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 19 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 500 mV
