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Fall Time: 12.8 ns, 34.4 ns
Rise Time: 11.1 ns, 14.9 ns
Technology: Si
Unit Weight: 10 mg
Channel Mode: Enhancement
Configuration: Quad
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel, 2 P-Channel
Qg - Gate Charge: 9.7 nC, 17.5 nC
Number of Channels: 4 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 2.1 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 10.5 ns, 9.1 ns
Typical Turn-Off Delay Time: 42.6 ns, 57.4 ns
Id - Continuous Drain Current: 2.9 A, 2.3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 111 mOhms, 191 mOhms
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: 1 V, 3 V
