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Fall Time: 5.5 ns, 15.3 ns
Rise Time: 2.6 ns, 2.9 ns
Technology: Si
Unit Weight: 74 mg
Channel Mode: Enhancement
Configuration: Quad
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel, 2 P-Channel
Qg - Gate Charge: 11.1 nC, 12.5 nC
Number of Channels: 4 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.5 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 3.1 ns, 3.6 ns
Typical Turn-Off Delay Time: 15 ns, 36.3 ns
Id - Continuous Drain Current: 4.5 A, 3.7 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 45 mOhms, 65 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 1 V
