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Fall Time: 6208 ns, 6208 ns
Rise Time: 1694 ns, 1694 ns
Technology: Si
Unit Weight: 2.600 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 56.5 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2.67 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 603 ns, 603 ns
Typical Turn-Off Delay Time: 47479 ns, 4747 ns
Id - Continuous Drain Current: 23.6 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 2.3 mOhms, 2.3 mOhms
Vds - Drain-Source Breakdown Voltage: 12 V
Vgs th - Gate-Source Threshold Voltage: 500 mV
