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Fall Time: 2.8 ns
Rise Time: 9.3 ns
Technology: Si
Unit Weight: 8 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 12.6 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.7 W
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Typical Turn-On Delay Time: 3 ns
Typical Turn-Off Delay Time: 17.2 ns
Id - Continuous Drain Current: 6.9 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 25 mOhms, 25 mOhms
Vds - Drain-Source Breakdown Voltage: 12 V
Vgs th - Gate-Source Threshold Voltage: 1 V
