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Width: 4.25 mm
Height: 0.56 mm
Length: 4.6 mm
Technology: Si
Unit Weight: 750 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Id - Continuous Drain Current: 12 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 8 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
