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Diodes Incorporated DMN26D0UT-7 MOSFET Small Signals N-Ch -20V VDSS 230mA 300mW

Name: Diodes Incorporated DMN26D0UT-7 MOSFET Small Signals N-Ch -20V VDSS 230mA 300mW
Brand: Diodes Incorporated

ModelDMN26D0UT-7

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Fall Time: 15.2 ns

Rise Time: 7.9 ns

Technology: Si

Unit Weight: 2 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 3.8 ns

Typical Turn-Off Delay Time: 13.4 ns

Id - Continuous Drain Current: 230 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 242 mS

Rds On - Drain-Source Resistance: 3 Ohms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 500 mV