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Fall Time: 858 ns, 858 ns
Rise Time: 314 ns, 314 ns
Technology: Si
Unit Weight: 2.600 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 31.3 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2.7 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 186 ns, 186 ns
Typical Turn-Off Delay Time: 928 ns, 928 ns
Id - Continuous Drain Current: 14.6 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 6.1 mOhms, 6.1 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.3 V
