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Fall Time: 13.6 ns
Rise Time: 2.6 ns
Technology: Si
Unit Weight: 6 mg
Channel Mode: Enhancement
Configuration: Dual
Transistor Type: 2 N-Channel
Qg - Gate Charge: 1.25 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, NPN
Pd - Power Dissipation: 430 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 2.9 ns
Typical Turn-Off Delay Time: 18.2 ns
Id - Continuous Drain Current: 350 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 2.4 Ohms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 800 mV
