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Technology: Si
Unit Weight: 30 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 37 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Id - Continuous Drain Current: 11.5 A
Rds On - Drain-Source Resistance: 15 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
