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Fall Time: 16.7 ns
Rise Time: 3.9 ns
Technology: Si
Unit Weight: 6 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 900 pC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 420 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 2.3 ns
Typical Turn-Off Delay Time: 11.4 ns
Id - Continuous Drain Current: 380 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 80 mS
Rds On - Drain-Source Resistance: 2.8 Ohms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 800 mV
