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Fall Time: 3.9 ns
Rise Time: 2.6 ns
Technology: Si
Unit Weight: 30 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 9.5 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 2.16 W
Vgs - Gate-Source Voltage: - 6 V, + 6 V
Typical Turn-On Delay Time: 6.3 ns
Typical Turn-Off Delay Time: 14.4 ns
Id - Continuous Drain Current: 19 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 9.8 mOhms
Vds - Drain-Source Breakdown Voltage: 12 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V
