Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Width: 1.2 mm
Height: 0.6 mm
Length: 1.6 mm
Technology: Si
Unit Weight: 6 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 P-Channel
Number of Channels: 2 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 400 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Id - Continuous Drain Current: 530 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Rds On - Drain-Source Resistance: 900 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
