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Width: 4.1 mm
Height: 1.5 mm
Length: 5.3 mm
Fall Time: 23.4 ns
Rise Time: 9.9 ns
Technology: Si
Unit Weight: 851 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 P-Channel
Qg - Gate Charge: 10.1 nC
Number of Channels: 2 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 2 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 4.4 ns
Typical Turn-Off Delay Time: 28 ns
Id - Continuous Drain Current: 5.8 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 40 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V
