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Fall Time: 396 ns, 396 ns
Rise Time: 144 ns, 144 ns
Technology: Si
Unit Weight: 65 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 P-Channel
Qg - Gate Charge: 21.4 nC
Number of Channels: 2 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 1.9 W
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Typical Turn-On Delay Time: 70 ns, 70 ns
Typical Turn-Off Delay Time: 626 ns, 626 ns
Id - Continuous Drain Current: 5.7 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 25 mOhms, 25 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1.4 V
