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Width: 1.35 mm
Height: 1 mm
Length: 2.2 mm
Fall Time: 22.2 ns
Rise Time: 10.3 ns
Technology: Si
Unit Weight: 6 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel MOSFET
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 250 mW
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 12.5 ns
Typical Turn-Off Delay Time: 46.5 ns
Id - Continuous Drain Current: 1.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 3.1 S
Rds On - Drain-Source Resistance: 150 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
