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Fall Time: 237 ns
Rise Time: 2.3 ns
Technology: Si
Unit Weight: 8 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 360 pC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 430 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 3.3 ns
Typical Turn-Off Delay Time: 406 ns
Id - Continuous Drain Current: 580 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 900 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.6 V
