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Fall Time: 30.9 ns
Rise Time: 14.7 ns
Technology: Si
Unit Weight: 30 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 33.7 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 810 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 6.9 ns
Typical Turn-Off Delay Time: 53.7 ns
Id - Continuous Drain Current: 7.2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 16.6 S
Rds On - Drain-Source Resistance: 18 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
