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Fall Time: 3.9 ns
Rise Time: 2.6 ns
Technology: Si
Unit Weight: 1 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 6 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 900 mW
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 2.2 ns
Typical Turn-Off Delay Time: 9.3 ns
Id - Continuous Drain Current: 3.4 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 90 mOhms
Vds - Drain-Source Breakdown Voltage: 115 V
Vgs th - Gate-Source Threshold Voltage: 2.2 V
