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Fall Time: 5.03 ns
Rise Time: 20.67 ns
Technology: SiC
Channel Mode: Enhancement
REACH - SVHC: Details
Mounting Style: Through Hole
Qg - Gate Charge: 52 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 208 W
Vgs - Gate-Source Voltage: - 8 V, + 19 V
Typical Turn-On Delay Time: 10.42 ns
Typical Turn-Off Delay Time: 15.05 ns
Id - Continuous Drain Current: 37.2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 3.8 S
Rds On - Drain-Source Resistance: 100 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 3.5 V
