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Width: 0.8 mm
Height: 0.45 mm
Length: 1 mm
Technology: Si
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 300 mW
DC Current Gain hFE Max: 120 at 2 mA, 6 V
Gain Bandwidth Product fT: 60 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 60 V
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 120
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 100 mV
