Technology: Si
Unit Weight: 96 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 3.2 W
DC Current Gain hFE Max: 800
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 50 V
Continuous Collector Current: - 3 A
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 300
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 450 mV