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Technology: Si
Unit Weight: 10 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 690 mW
DC Current Gain hFE Max: 290 at 1 A, 2 V
Gain Bandwidth Product fT: 150 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 40 V
Continuous Collector Current: 5 A
Maximum DC Collector Current: 7 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 200 at 1 A, 2 V
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 150 mV
