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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 2 W
DC Current Gain hFE Max: 475
Gain Bandwidth Product fT: 200 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 80 V
Continuous Collector Current: 5.5 A
Maximum DC Collector Current: 5.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 80
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 180 mV
