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Technology: Si
Unit Weight: 30 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 1.07 W
DC Current Gain hFE Max: 800 at - 1 A, - 2 V
Gain Bandwidth Product fT: 125 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 110 V
Continuous Collector Current: - 5 A
Maximum DC Collector Current: 10 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 200 at - 1 A, - 2 V
Collector- Emitter Voltage VCEO Max: 100 V
Collector-Emitter Saturation Voltage: 212 mV
