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Diodes Incorporated DXTP3C100PSQ-13 BJTs - Bipolar Transistors 100V PNP High Pwr Low Sat Transistor

Name: Diodes Incorporated DXTP3C100PSQ-13 BJTs - Bipolar Transistors 100V PNP High Pwr Low Sat Transistor
Brand: Diodes Incorporated

ModelDXTP3C100PSQ-13

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Technology: Si

Unit Weight: 97 mg

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Moisture Sensitive: Yes

Transistor Polarity: PNP

Pd - Power Dissipation: 5 W

Gain Bandwidth Product fT: 125 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: - 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 10

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 360 mV