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Width: 2.5 mm
Height: 1.5 mm
Length: 4.5 mm
Technology: Si
Unit Weight: 52 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 1 W
DC Current Gain hFE Max: 100 at 1 mA, 10 V
Gain Bandwidth Product fT: 150 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 220 V
Continuous Collector Current: - 300 mA
Maximum DC Collector Current: 300 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 35 at 400 mA, 10 V
Collector- Emitter Voltage VCEO Max: 200 V
Collector-Emitter Saturation Voltage: 350 mV
