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Diodes Incorporated MMDT4401Q-7-F BJTs - Bipolar Transistors Dual NPN Small Signal Transistor

Name: Diodes Incorporated MMDT4401Q-7-F BJTs - Bipolar Transistors Dual NPN Small Signal Transistor
Brand: Diodes Incorporated

ModelMMDT4401Q-7-F

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Technology: Si

Unit Weight: 6 mg

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 600 mA

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 750 mV