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Width: 2.41 mm
Height: 4.01 mm
Length: 4.77 mm
Technology: Si
Unit Weight: 453.600 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 1 W
DC Current Gain hFE Max: 200 at 10 mA, 2 V
Gain Bandwidth Product fT: 140 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 20 V
Continuous Collector Current: 3.5 A
Maximum DC Collector Current: 3.5 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 200 at 10 mA, 2 V, 300 at 200 mA, 2 V, 170 at 3 A, 2 V, 40 at 10 A, 2 V
Collector- Emitter Voltage VCEO Max: 20 V
Collector-Emitter Saturation Voltage: 210 mV
