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Width: 2.41 mm
Height: 4.01 mm
Length: 4.77 mm
Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 1 W
Gain Bandwidth Product fT: 130 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 150 V
Continuous Collector Current: 4.5 A
Maximum DC Collector Current: 4.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 60 V
