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Fall Time: 6.3 ns, 21 ns
Rise Time: 3.3 ns, 3 ns
Technology: Si
Unit Weight: 750 mg
Channel Mode: Enhancement
Configuration: Quad
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel, 2 P-Channel
Qg - Gate Charge: 9 nC, 12.7 nC
Number of Channels: 4 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 870 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 2.5 ns, 1.9 ns
Typical Turn-Off Delay Time: 11.5 ns, 30 ns
Id - Continuous Drain Current: 4.98 A, 4.13 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 11.8 S, 14 S
Rds On - Drain-Source Resistance: 33 mOhms, 55 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1 V
