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Width: 3.9 mm
Height: 1.75 mm
Length: 4.9 mm
Fall Time: 15 us
Rise Time: 10 us
Technology: Si
Unit Weight: 750 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.56 W
Typical Turn-On Delay Time: 5 us
Typical Turn-Off Delay Time: 45 us
Id - Continuous Drain Current: 1.3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 500 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
