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Fall Time: 19 us, 19 us
Rise Time: 14 us, 14 us
Technology: Si
Unit Weight: 750 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.67 W
Vgs - Gate-Source Voltage: - 5 V, + 5 V
Typical Turn-On Delay Time: 6 us, 6 us
Typical Turn-Off Delay Time: 34 us, 34 us
Id - Continuous Drain Current: 1.8 A
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 150 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 700 mV
