Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Width: 3.1 mm
Height: 0.95 mm
Length: 3.1 mm
Technology: Si
Unit Weight: 140 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 870 mW
DC Current Gain hFE Max: 250 at 10 mA, 2 V
Gain Bandwidth Product fT: 112 MHz
Emitter- Base Voltage VEBO: 7.5 V
Collector- Base Voltage VCBO: 50 V
Continuous Collector Current: 3.5 A
Maximum DC Collector Current: 3.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 250 at 10 mA, 2 V, 300 at 1 A, 2 V, 200 at 3.5 A, 2 V, 40 at 10 A, 2 V
Collector- Emitter Voltage VCEO Max: 20 V
Collector-Emitter Saturation Voltage: 160 mV
