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Width: 3.1 mm
Height: 0.95 mm
Length: 3.1 mm
Technology: Si
Unit Weight: 140 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 870 mW
DC Current Gain hFE Max: 250 at 10 mA, 2 V
Gain Bandwidth Product fT: 132 MHz
Emitter- Base Voltage VEBO: 7.5 V
Collector- Base Voltage VCBO: 100 V
Continuous Collector Current: 3 A
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 250 at 10 mA, 2 V, 300 at 1 A, 2 V, 150 at 3 A, 2 V, 50 at 5 A, 2 V
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 135 mV
