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Width: 3.1 mm
Height: 0.95 mm
Length: 3.1 mm
Technology: Si
Unit Weight: 140 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 1.25 W
Gain Bandwidth Product fT: 130 MHz
Emitter- Base Voltage VEBO: 7.5 V
Collector- Base Voltage VCBO: 50 V
Continuous Collector Current: - 2.5 A
Maximum DC Collector Current: 2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 150 mV
