Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Width: 1.8 mm
Height: 1.3 mm
Length: 3.1 mm
Technology: Si
Unit Weight: 6.500 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 1.7 W
DC Current Gain hFE Max: 300 at 10 mA, 2 V
Gain Bandwidth Product fT: 90 MHz
Emitter- Base Voltage VEBO: 7.5 V
Collector- Base Voltage VCBO: 25 V
Continuous Collector Current: - 4 A
Maximum DC Collector Current: 3.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 300 at 10 mA, 2 V, 300 at 1 A, 2 V, 200 at 4 A, 2 V, 20 at 10 A, 2 V
Collector- Emitter Voltage VCEO Max: 20 V
Collector-Emitter Saturation Voltage: 165 mV
