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Width: 1.8 mm
Height: 1.3 mm
Length: 3.1 mm
Technology: Si
Unit Weight: 15 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 1.7 W
DC Current Gain hFE Max: 300 at 10 mA, 2 V
Gain Bandwidth Product fT: 215 MHz, 290 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 100 V, 25 V
Maximum DC Collector Current: 4 A, 3.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 300 at 10 mA, 2 V at NPN, 280 at 1 A, 2 V at NPN, 140 at 4 A, 2 V at NPN, 300 at 10 mA, 2 V at PNP, 170 at 1 A, 2 V at PNP, 65 at 3.5 A, 2 V at PNP
Collector- Emitter Voltage VCEO Max: 20 V
Collector-Emitter Saturation Voltage: 140 mV, 190 mV
